डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
C3M0045065K | Silicon Carbide Power MOSFET VDS
650 V
C3M0045065K
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
ID @ 25˚C RDS(on)
49 A 45 mΩ
N-Channel Enhancement Mode
Features
Package
• C3MTM SiC MOSFET technology
• Opti |
Cree |
|
C3M0045065K | Silicon Carbide Power MOSFET C3M0045065K
Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode
Drain (Pin 1, TAB)
Features • C3MTM Silicon Carbide (SiC) MOSFET technology • Optimized package with separate d |
Wolfspeed |
www.DataSheet.in | 2017 | संपर्क |