डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
C3669 | 2SC3669 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3669
Power Amplifier Applications Power Switching Applications
2SC3669
Unit: mm
• Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC |
Toshiba |
|
C3665 | 2SC3665 | Toshiba Semiconductor |
|
C3668 | 2SC3668 | Toshiba |
|
C3669 | 2SC3669 | Toshiba |
|
C3664 | 2SC3664 | Sanyo |
|
C3661 | 2SC3661 | Sanyo |
www.DataSheet.in | 2017 | संपर्क |