| No. | Partie # | Fabricant | Description | Fiche Technique |
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ProMOS Technologies |
(V54C3xxxx4VE) 64Mbit SDRAM ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 4 banks x 1Mbit x 16 organization 4 banks x 2Mbit x 8 organization 4 banks x 4Mbit x 4 organization High speed data transfer rates up to 166 MHz Full Synchronous Dynamic RAM, with all signals referenced to clock rising edge Sing |
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Mosel Vitelic Corp |
HIGH PERFORMANCE 166/143/125 MHz 3.3 VOLT 4M X 16 SYNCHRONOUS DRAM 4 BANKS X 1Mbit X 16 Description The V54C365164VC is a four bank Synchronous DRAM organized as 4 banks x 1Mbit x 16. The V54C365164VC achieves high speed data transfer rates up to 166 MHz by employing a chip architecture that prefetches multiple bits and then synchroniz |
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Mosel Vitelic |
HIGH PERFORMANCE 225/200/166/143 MHz 3.3 VOLT 4M X 16 SYNCHRONOUS DRAM 4 BANKS X 1Mbit X 16 s 4 banks x 1Mbit x 16 organization s High speed data transfer rates up to 225 MHz s Full Synchronous Dynamic RAM, with all signals referenced to clock rising edge s Single Pulsed RAS Interface s Data Mask for byte Control s Four Banks controlled by |
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Mosel Vitelic |
HIGH PERFORMANCE 225/200/166/143 MHz 3.3 VOLT 4M X 16 SYNCHRONOUS DRAM 4 BANKS X 1Mbit X 16 s 4 banks x 1Mbit x 16 organization s High speed data transfer rates up to 225 MHz s Full Synchronous Dynamic RAM, with all signals referenced to clock rising edge s Single Pulsed RAS Interface s Data Mask for byte Control s Four Banks controlled by |
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Mosel Vitelic Corp |
HIGH PERFORMANCE 166/143/125 MHz 3.3 VOLT 4M X 16 SYNCHRONOUS DRAM 4 BANKS X 1Mbit X 16 Description The V54C365164VC is a four bank Synchronous DRAM organized as 4 banks x 1Mbit x 16. The V54C365164VC achieves high speed data transfer rates up to 166 MHz by employing a chip architecture that prefetches multiple bits and then synchroniz |
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Sanyo Semicon Device |
NPN Transistor · High DC current gain (hFE=500 to 2000). · High breakdown voltage (VCEO≥100V). · Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). · High VEBO (VEBO≥15V). · Very small size making it easy to provide high- density, small-sized hybrid IC’s. |
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Mosel Vitelic Corp |
64 Mbit DDR SDRAM 4M X 16/ 3.3VOLT ■ 4 banks x 1Mbit x 16 organization ■ High speed data transfer rates with system frequency up to 275 MHz ■ Data Mask for Write Control (DM) ■ Four Banks controlled by BA0 & BA1 ■ Programmable CAS Latency: 2, 2.5, 3 ■ Programmable Wrap Sequence: Seque |
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Kexin |
Transistor High DC current gain High breakdown voltage Low colleotor-to- emitter saturation voltage High VEBO (VEBO 15V) Very small size making it easy to provide high-density small-sized hybrid IC's. Absolute Maximum Ratings Ta = 25 Parameter collector-base |
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Sanyo |
2SC3651 · High DC current gain (hFE=500 to 2000). · High breakdown voltage (VCEO≥100V). · Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). · High VEBO (VEBO≥15V). · Very small size making it easy to provide high- density, small-sized hybrid IC’s. |
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