डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
C3514 | 2SC3514 INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3514
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 180V(Min) ·Good Linearity of hFE ·Complement to |
Inchange Semiconductor |
|
C3519 | 2SC3519 | Mospec Semiconductor |
|
C3518-Z | SILICON POWER TRANSISTOR | Renesas |
|
C3514 | 2SC3514 | Inchange Semiconductor |
|
C3515 | 2SC3515 | Toshiba |
www.DataSheet.in | 2017 | संपर्क |