| No. | Partie # | Fabricant | Description | Fiche Technique |
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Sanyo Semicon Device |
2SC3460 · High breakdown voltage and high reliability. · Fast switching speed (tf : 0.1µs typ). · Wide ASO. · Adoption of MBIT process. Package Dimensions unit:mm 2022A [2SC3460] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-B |
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SavantIC |
SILICON POWER TRANSISTOR e Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition fre |
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INCHANGE |
NPN Transistor ustaining Voltage Collector-Base Breakdown Voltage IC= 5mA; RBE= ∞ IC= 3A; IB1= -IB2= 0.6A; L= 1mH; clamped IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A VBE( |
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Sanyo Semicon Device |
NPN Transistor · High breakdown voltage and high reliability. · Fast switching speed (tf : 0.1µs typ). · Wide ASO. · Adoption of MBIT process. Package Dimensions unit:mm 2022A [2SC3460] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-B |
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