डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
C3306 | 2SC3306 |
Toshiba Semiconductor |
|
C3306 | Silicon NPN Power Transistor isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC3306
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot var |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |