डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
C3279 | NPN silicon ·ç¹âÐÀ¼¼Êõ×ÊÁÏ
■■ APPLICATION:POWER AMPLIFIER APPLICATION、 SWITCHING APPLICATION. ■■MAXIMUM RATINGS (Ta=25℃) PARAMETER Collector-base voltage Collector-emitter voltage Emitter- |
FGX |
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C3279 | 2SC3279 2SC3279
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3279
Strobe Flash Applications Medium Power Amplifier Applications
· High DC current gain and excellent hFE linearity : hFE (1) = 140~600 |
Toshiba Semiconductor |
www.DataSheet.in | 2017 | संपर्क |