C2M0280120D डाटा शीट PDF( Datasheet )

VDS 1200 V C2M0280120D Silicon Carbide Power MOSFET TM C2M MOSFET Technology ID @ 25˚C RDS(on) 11 A 280 mΩ N-Channel Enhancement Mode Features Package • High Blocking Voltage with Low On-R

C2M0280120D Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enhancement Mode Features • C2MTM Silicon Carbide (SiC) MOSFET technology • High blocking voltage with low On-resistance • High