डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
C2710 | 2SC2710 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2710
2SC2710
For Audio Amplifier Applications
Unit: mm
· High DC current gain: hFE (1) = 100~320 · Complementary to 2SA1150
Maximum Ratings |
Toshiba |
|
C271C | UPC271 | NEC |
|
C2719 | Photosensor Amplifier | Hamamatsu |
|
C2717 | 2SC2717 | Toshiba |
|
C2712 | 2SC2712 | Weitron Technology |
|
C2710 | 2SC2710 | Toshiba |
|
C2713 | 2SC2713 | Toshiba |
|
C2712 | NPN EPITAXIAL SILICON TRANSISTOR | WEJ |
|
C2715 | Silicon Epitaxial Planar Transistor | GME |
|
C2714 | 2SC2714 | Toshiba |
|
C2712 | Silicon NPN Transistors | Toshiba |
www.DataSheet.in | 2017 | संपर्क |