डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
C2669 | 2SC2669 2SC2669
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process)
2SC2669
High Frequency Amplifier Applications
Unit: mm
· High power gain: Gpe = 30dB (typ.) (f = 10.7 MHz) · Recommended for FM IF |
Toshiba Semiconductor |
|
C2665 | Silicon NPN Power Transistor | Inchange Semiconductor |
|
C2668 | 2SC2668 | Toshiba |
|
C2669 | 2SC2669 | Toshiba Semiconductor |
|
C2660 | 2SC2660 | SavantIC |
|
C2660 | 2SC2660 | Panasonic |
www.DataSheet.in | 2017 | संपर्क |