| No. | Partie # | Fabricant | Description | Fiche Technique |
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STMicroelectronics |
Transil diodes • Peak pulse power: – 400 W (10/1000 μs) – up to 2.3 kW (8/20 μs) • Stand-off voltage range from 5.8 V to 376 V • Unidirectional and bidirectional types • Operating Tj max: 175 °C • High power capability at Tj max.: up to 230 W (10/1000 µs) • Lead fi |
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Diotec Semiconductor |
Unidirectional and bidirectional Transient Voltage Suppressor Diodes f sine-wave Stoßstrom für eine 60 Hz Sinus-Halbwelle Max. instantaneous forward voltage Augenblickswert der Durchlaßspannung IF = 25A TA = 25/C TA = 25/C TA = 25/C VBR # 200 V VBR > 200 V Kenn- und Grenzwerte PPPM PM(AV) IFSM VF VF Tj TS RthA RthL 4 |
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Multicomp |
Transient Voltage Suppressor Diodes • Plastic package. • Exceeds environmental standards of MIL-STD-19500. • 400W surge capability at 10 x 1000µs waveform, duty cycle: 0.01%. • Excellent clamping capability. • Low impedancesurge resistance. • Very fast response timeV. • Typical IR les |
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Vishay |
Transient Voltage Suppressors • Glass passivated chip junction • Available in uni-directional and bi-directional • 400 W peak pulse power capability with a 10/1000 μs waveform, repetitive rate (duty cycle): 0.01 % • Excellent clamping capability • Very fast response time • Low |
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GALAXY ELECTRICAL |
TRANSIENT VOLTAGE SUPPRESSOR Plastic package has underwriters laboratory flam mability classification 94V-0 Glass passivated junction 400W peak pulse power capability with a 10/1000μs waveform, repetition rate (duty cycle): 0.01% Excellent clam ping capability Fast response tim |
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GALAXY ELECTRICAL |
TRANSIENT VOLTAGE SUPPRESSOR Plastic package has underwriters laboratory flam mability classification 94V-0 Glass passivated junction 400W peak pulse power capability with a 10/1000μs waveform, repetition rate (duty cycle): 0.01% Excellent clam ping capability Fast response tim |
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Vishay |
Transient Voltage Suppressors • Glass passivated chip junction • Available in uni-directional and bi-directional • 400 W peak pulse power capability with a 10/1000 μs waveform, repetitive rate (duty cycle): 0.01 % • Excellent clamping capability • Very fast response time • Low |
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MDE Semiconductor |
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR • Plastic package has Underwriters Laboratory Flammability Classification 94 V-O • Glass passivated chip junction in DO-41 package • 400W surge capability at 1ms • Excellent clamping capability • Low zener impedance • Low incremental surge resistance |
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MDE Semiconductor |
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR • Plastic package has Underwriters Laboratory Flammability Classification 94 V-O • Glass passivated chip junction in DO-41 package • 400W surge capability at 1ms • Excellent clamping capability • Low zener impedance • Low incremental surge resistance |
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General Semiconductor |
TRANSZORB TRANSIENT VOLTAGE SUPPRESSOR ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Glass passivated chip junction ♦ 400W peak pulse power capability with a 10/1000µs waveform, repetition rate (duty cycle): 0.01% ♦ Excellent clamping capability ♦ Low i |
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EIC discrete Semiconductors |
TRANSIENT VOLTAGE SUPPRESSOR : * 400W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO - 41 1.00 (25.4) MI |
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STMicroelectronics |
Transil diodes • Peak pulse power: – 400 W (10/1000 μs) – up to 2.3 kW (8/20 μs) • Stand-off voltage range from 5.8 V to 376 V • Unidirectional and bidirectional types • Operating Tj max: 175 °C • High power capability at Tj max.: up to 230 W (10/1000 µs) • Lead fi |
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General Semiconductor |
TRANSZORB TRANSIENT VOLTAGE SUPPRESSOR ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Glass passivated chip junction ♦ 400W peak pulse power capability with a 10/1000µs waveform, repetition rate (duty cycle): 0.01% ♦ Excellent clamping capability ♦ Low i |
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EIC discrete Semiconductors |
TRANSIENT VOLTAGE SUPPRESSOR : * 400W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO - 41 1.00 (25.4) MI |
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Multicomp |
Transient Voltage Suppressor Diodes • Plastic package. • Exceeds environmental standards of MIL-STD-19500. • 400W surge capability at 10 x 1000µs waveform, duty cycle: 0.01%. • Excellent clamping capability. • Low impedancesurge resistance. • Very fast response timeV. • Typical IR les |
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Vishay |
Transient Voltage Suppressors • Glass passivated chip junction • Available in uni-directional and bi-directional • 400 W peak pulse power capability with a 10/1000 μs waveform, repetitive rate (duty cycle): 0.01 % • Excellent clamping capability • Very fast response time • Low |
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GALAXY ELECTRICAL |
TRANSIENT VOLTAGE SUPPRESSOR Plastic package has underwriters laboratory flam mability classification 94V-0 Glass passivated junction 400W peak pulse power capability with a 10/1000μs waveform, repetition rate (duty cycle): 0.01% Excellent clam ping capability Fast response tim |
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GALAXY ELECTRICAL |
TRANSIENT VOLTAGE SUPPRESSOR Plastic package has underwriters laboratory flam mability classification 94V-0 Glass passivated junction 400W peak pulse power capability with a 10/1000μs waveform, repetition rate (duty cycle): 0.01% Excellent clam ping capability Fast response tim |
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Vishay |
Transient Voltage Suppressors • Glass passivated chip junction • Available in uni-directional and bi-directional • 400 W peak pulse power capability with a 10/1000 μs waveform, repetitive rate (duty cycle): 0.01 % • Excellent clamping capability • Very fast response time • Low |
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MDE Semiconductor |
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR • Plastic package has Underwriters Laboratory Flammability Classification 94 V-O • Glass passivated chip junction in DO-41 package • 400W surge capability at 1ms • Excellent clamping capability • Low zener impedance • Low incremental surge resistance |
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