BYV32E fiche technique

No.	Partie #	Fabricant	Description
1	BYV32EB	NXP	Rectifier diode • Low forward volt drop • Fast switching • Soft recovery characteristic • Reverse surge capability • High thermal cycling performance • Low thermal resistance BYV32E, BYV32EB series SYMBOL QUICK REFERENCE DATA VR = 150 V/ 200 V VF ≤ 0.85 V IO(AV)
2	BYV32EB-200	NXP	Rectifier diode • Low forward volt drop • Fast switching • Soft recovery characteristic • Reverse surge capability • High thermal cycling performance • Low thermal resistance BYV32E, BYV32EB series SYMBOL QUICK REFERENCE DATA VR = 150 V/ 200 V VF ≤ 0.85 V IO(AV)
3	BYV32E-200	NXP	Dual rugged ultrafast rectifier diode and benefits High reverse voltage surge capability High thermal cycling performance Low thermal resistance Soft recovery characteristic minimizes power consuming oscillations Very low on-state loss 1.3 Applications Output rectifiers in
4	BYV32EB-150	NXP	Rectifier diode • Low forward volt drop • Fast switching • Soft recovery characteristic • Reverse surge capability • High thermal cycling performance • Low thermal resistance BYV32E, BYV32EB series SYMBOL QUICK REFERENCE DATA VR = 150 V/ 200 V VF ≤ 0.85 V IO(AV)
5	BYV32E-150	WeEn	Dual rugged ultrafast rectifier diode and benefits • High reverse voltage surge capability • High thermal cycling performance • Low thermal resistance • Very low on-state loss • Soft recovery characteristic minimizes power consuming oscillations 3. Applications • Output rectifiers in hi
6	BYV32E-100	WeEn	Dual rugged ultrafast rectifier diode and benefits • High reverse voltage surge capability • High thermal cycling performance • Low thermal resistance • Very low on-state loss • Soft recovery characteristic minimizes power consuming oscillations 3. Applications • Output rectifiers in hi
7	BYV32EX-300P	WeEn	Dual ultrafast power diode and benefits • Ultra low leakage current • High junction temperature up to 175 °C • Low on-state loss • Fast switching • Soft recovery characteristic minimizes power consuming oscillations • High reverse surge capability • High thermal cycling perfor
8	BYV32EB-300P	WeEn	Dual ultrafast power diode and benefits • Ultra low leakage current • High junction temperature up to 175 °C • Low on-state loss • Fast switching • Soft recovery characteristic minimizes power consuming oscillations • High reverse surge capability • High thermal cycling perfor
9	BYV32E-200	WeEn	Dual rugged ultrafast rectifier diode and benefits • High reverse voltage surge capability • High thermal cycling performance • Low thermal resistance • Very low on-state loss • Soft recovery characteristic minimizes power consuming oscillations 3. Applications • Output rectifiers in hi
10	BYV32E	NXP	Rectifier diode • Low forward volt drop • Fast switching • Soft recovery characteristic • Reverse surge capability • High thermal cycling performance • Low thermal resistance BYV32E, BYV32EB series SYMBOL QUICK REFERENCE DATA VR = 150 V/ 200 V VF ≤ 0.85 V IO(AV)
11	BYV32E-150	NXP	Dual rugged ultrafast rectifier diode and benefits High reverse voltage surge capability High thermal cycling performance Low thermal resistance Soft recovery characteristic minimizes power consuming oscillations Very low on-state loss 1.3 Applications Output rectifiers in
12	BYV32EX	NXP	Rectifier diode • Low forward volt drop • Fast switching • Soft recovery characteristic • Reverse surge capability • High thermal cycling performance • Isolated mounting tab BYV32F, BYV32EX series SYMBOL QUICK REFERENCE DATA VR = 150 V/ 200 V a1 1 k 2 a2 3 VF
13	BYV32EX-150	NXP	Rectifier diode • Low forward volt drop • Fast switching • Soft recovery characteristic • Reverse surge capability • High thermal cycling performance • Isolated mounting tab BYV32F, BYV32EX series SYMBOL QUICK REFERENCE DATA VR = 150 V/ 200 V a1 1 k 2 a2 3 VF
14	BYV32EX-200	NXP	Rectifier diode • Low forward volt drop • Fast switching • Soft recovery characteristic • Reverse surge capability • High thermal cycling performance • Isolated mounting tab BYV32F, BYV32EX series SYMBOL QUICK REFERENCE DATA VR = 150 V/ 200 V a1 1 k 2 a2 3 VF
15	BYV32E-200P	NXP	Dual ultrafast power diode and benefits • Ultra low leakage current • High junction temperature up to 175 °C • Low on-state loss • Fast switching • Soft recovery characteristic minimizes power consuming oscillations • High reverse surge capability • High thermal cycling perfor
16	BYV32EB-200P	WeEn	Dual ultrafast power diode and benefits • Low on-state loss • Ultra low leakage • Fast switching • Soft recovery characteristic minimizes power consuming oscillations • High reverse surge capability • High thermal cycling performance • Low thermal resistance 3. Applications •
17	BYV32E-200	INCHANGE	fast Rectifier ·With TO-220 packaging ·High junction temperature capability ·Low forward voltage ·High current capability ·Low power loss, high efficiency ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching po
18	BYV32E	INCHANGE	Ultrafast Rectifier ·High surge capacity ·Low forward voltage ·Fast switching ·Soft recovery characteristic ·Reverse surge capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power supply-output rectification ·Po
19	BYV32E-100	NXP	Rectifier diodes ultrafast/ rugged