BUZ901D डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor FEATURES ·Drain Current: ID= 16A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and r

MAGNA TEC 20.0 5.0 BUZ900DP BUZ901DP MECHANICAL DATA Dimensions in mm 3.3 Dia. N–CHANNEL POWER MOSFET POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES 1 2.0 2 3 2.0 1.0 • HIGH SPEED SWITCHING • N�