BUZ80 डाटा शीट PDF( Datasheet )

BUZ80 BUZ80FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ80 BUZ80FI s s s s s s s V DSS 800 V 800 V R DS( on) < 4Ω < 4Ω ID 3.4 A 2.1 A TYPICAL RDS(on) = 3.3 Ω AVALANCHE RUGGEDNESS TECHN

BUZ 80 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 80 VDS 800 V ID 3.1 A RDS(on) 4Ω Package TO-220 AB Ordering Code C67078-S13

isc N-Channel Mosfet Transistor BUZ80 ·FEATURES ·High speed switching ·Low RDS(ON) ·Easy driver for cost effective application ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device per

® BUZ80A N - CHANNEL 800V - 2.5Ω - 3.8A - TO-220 FAST POWER MOS TRANSISTOR TYPE BUZ80A V DSS 800 V R DS(on) <3Ω ID 3.8 A s s s s s s s TYPICAL RDS(on) = 2.5 Ω ± 30V GATE TO SOURCE VOLTAGE RATING

BUZ 80A SIPMOS ® Power Transistor • N channel • Enhancement mode Pin 1 G Pin 2 D Pin 3 S Type BUZ 80A VDS 800 V ID 3A RDS(on) 3Ω Package TO-220 AB Ordering Code C67078-A1309-A3 Maximum Rating

isc N-Channel Mosfet Transistor BUZ80A ·FEATURES ·High speed switching ·Low RDS(ON) ·Easy driver for cost effective application ·Minimum Lot-to-Lot variations for robust device performance and reliable o