BUZ72A डाटा शीट PDF( Datasheet )

BUZ72A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ72A s s s s s s s V DSS 100 V R DS( on) < 0.25 Ω ID 11 A TYPICAL RDS(on) = 0.23 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPE

BUZ 72 A SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 72 A VDS 100 V ID 9A RDS(on) 0.25 Ω Package TO-220 AB Ordering Code C6707

BUZ72A Data Sheet June 1999 File Number 2262.2 9A, 100V, 0.250 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as sw

SIPMOS ® Power Transistor BUZ 72A • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS 100 V ID 9A RDS(on) 0.25 Ω Package Ordering Code BUZ 72 A TO-220 AB

isc N-Channel Mosfet Transistor ·FEATURES ·Low RDS(on) ·SOA is Power Dissipation Limited ·Nanosecond Switching Speeds ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance a

BUZ 72 AL SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Pin 1 G Type BUZ 72 AL Pin 2 D Pin 3 S VDS 100 V ID 9A RDS(on) 0.25 Ω Package TO-220 AB Ord

SIPMOS ® Power Transistor BUZ 72AL • N channel • Enhancement mode • Avalanche-rated • Logic Level Pin 1 Pin 2 Pin 3 G Type D Ordering Code S VDS 100 V ID 9A RDS(on) 0.25 Ω Package BUZ 72