BUZ71 डाटा शीट PDF( Datasheet )

® BUZ71 N - CHANNEL 50V - 0.085Ω - 17A TO-220 STripFET™ POWER MOSFET T YPE BUZ71 s s s s s V DSS 50 V R DS(on) < 0.1 Ω ID 17 A TYPICAL RDS(on) = 0.085 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE

BUZ 71 Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 71 VDS 50 V ID 14 A RDS(on) 0.1 Ω Package TO-220 AB Orde

BUZ71 Data Sheet June 1999 File Number 2418.2 14A, 50V, 0.100 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as swi

Data Sheet December 2001 BUZ71 14A, 50V, 0.100 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regul

SEMICONDUCTORS BUZ71 N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS FEATURE N channel in a plastic TO220 package. They are intended for use in switched mode power supplies, motor control, welding, DC-DC & DC

isc N-Channel Mosfet Transistor ·FEATURES ·Low RDS(on) ·SOA is Power Dissipation Limited ·Nanosecond Switching Speeds ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance a

® BUZ71A N - CHANNEL 50V - 0.1Ω - 13A TO-220 STripFET™ POWER MOSFET T YPE BUZ71A s s s s s V DSS 50 V R DS(on) < 0.12 Ω ID 13 A TYPICAL RDS(on) = 0.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE