BUZ60B डाटा शीट PDF( Datasheet )

BUZ60 Semiconductor Data Sheet October 1998 File Number 2260.1 5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET Features • 5.5A, 400V [ /Title This is an N-Channel enhancement mode silicon gate power • r

BUZ60B N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ60B Voss 400 V Ros(on) 1.5 n 10 4.5 A • HIGH VOLTAGE - FOR OFF-LINE APPLICATIONS • ULTRA FAST SWITCHING • EASY DRIVE - FOR REDUCED COS

isc N-Channel Mosfet Transistor BUZ60B ·FEATURES ·4.5A, 400V ·SOA is Power Dissipation Limited ·Nanosecond Switching Speeds ·Linear Transfer Characteristics ·High Input Impedance ·Majority Carrier Devi