डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BUZ60 | Power Transistor BUZ 51
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Avalanche-rated
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 51
VDS
1000 V
ID
3.4 A
RDS(on)
4Ω
Package TO-220 AB
Ordering Code C67078-S1 |
Siemens Semiconductor Group |
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BUZ60 | N-Channel Power MOSFET |
Intersil Corporation |
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BUZ60 | Power Transistor |
Infineon Technologies AG |
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BUZ60 | N-Channel MOSFET BUZ60
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE BUZ60
Voss 400 V
Ros(on) 1.00
10 5.5 A
• HIGH VOLTAGE - FOR OFF-LINE APPLICATIONS
• ULTRA FAST SWITCHING • EASY DRIVE - FOR REDUCED COST A |
STMicroelectronics |
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BUZ60 | N-Channel MOSFET isc N-Channel Mosfet Transistor
BUZ60
·FEATURES ·5.5A, 400V ·SOA is Power Dissipation Limited ·Nanosecond Switching Speeds ·Linear Transfer Characteristics ·High Input Impedance ·Majority Carrier Devic |
INCHANGE |
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BUZ60B | Power Transistor BUZ60
Semiconductor
Data Sheet
October 1998
File Number 2260.1
5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET
Features
• 5.5A, 400V
[ /Title This is an N-Channel enhancement mode silicon gate power • r |
Siemens Semiconductor Group |
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BUZ60B | N-Channel Power MOSFET |
Intersil Corporation |
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