BUZ45 डाटा शीट PDF( Datasheet )

BUZ45 Semiconductor Data Sheet October 1998 File Number 2257.1 9.6A, 500V, 0.600 Ohm, N-Channel Power MOSFET Features • 9.6A, 500V [ /Title IThis is an N-Channel enhancement mode silicon gate • rDS(ON

BUZ45 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE I BUZ45 I Voss 500 V ROS(on) 0.6 0 10 9.6 A • HIGH VOLTAGE - FOR OFF-LINE SMPS • ULTRA FAST SWITCHING FOR OPERATION AT<100KHz • EASY DRIVE

isc N-Channel Mosfet Transistor INCHANGE Semiconductor BUZ45 ·FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max) ·SOA is Power Dissipation Limited ·High speed switching ·Minimum Lot-to-Lo

BUZ45A Semiconductor Data Sheet October 1998 File Number 2258.1 8.3A, 500V, 0.800 Ohm, N-Channel Power MOSFET Features • 8.3A, 500V [ /Title This is an N-Channel enhancement mode silicon gate power •

BUZ45A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ45A Voss 500 V RoS(on) 0.8 n 10 8.3 A • HIGH VOLTAGE - FOR OFF-LINE SMPS • ULTRA FAST SWITCHING FOR OPERATION AT<100KHz • EASY DRIVE -

isc N-Channel Mosfet Transistor ·FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 0.8Ω(Max) ·SOA is Power Dissipation Limited ·High speed switching ·Minimum Lot-to-Lot variations for robust device

BUZ45B Semiconductor Data Sheet October 1998 File Number 2259.1 10A, 500V, 0.500 Ohm, N-Channel Power MOSFET Features • 10A, 500V [ /Title This is an N-Channel enhancement mode silicon gate power • rD