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भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BUZ21 | Power Transistor BUZ 21
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Avalanche-rated
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 21
VDS
100 V
ID
21 A
RDS(on)
0.085 Ω
Package TO-220 AB
Ordering Code C67078 |
Siemens Semiconductor Group |
|
BUZ21 | Power Transistor SIPMOS ® Power Transistor
BUZ 21
• N channel • Enhancement mode • Avalanche-rated
Pin 1
Pin 2
Pin 3
G
D
S
Type
VDS
ID
RDS(on)
Package
Ordering Code
BUZ 21
100 V
21 A
0.085 Ω
TO-220 A |
Infineon Technologies AG |
|
BUZ21 | N-Channel MOSFET BUZ21
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
TYPE BUZ21
Voss 100 V
Ros(on) 0.1 0
10 19 A
• 100 VOLTS - FOR DC/DC CONVERTERS • HIGH CURRENT • RATED FOR UNCLAMPED INDUCTIVE
SWITCHING (ENERGY |
STMicroelectronics |
|
BUZ21 | N-Channel Power MOSFET Semiconductor
Data Sheet
BUZ21
October 1998 File Number 2420.1
19A, 100V, 0.100 Ohm, N-Channel Power
Features
MOSFET
[ /Title
(BUZ21)
This is an N-Channel enhancement mode silicon gate power field effe |
Harris |
|
BUZ21 | N-Channel MOSFET isc N-Channel Mosfet Transistor
BUZ21
·FEATURES ·Static Drain-Source On-Resistance
: RDS(on) = 0.1Ω(Max) ·SOA is Power Dissipation Limited ·High input impedance ·High speed switching ·Minimum Lot-to-Lo |
INCHANGE |
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Siemens |
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BUZ211 | N-Channel MOSFET Transistor isc N-Channel Mosfet Transistor
BUZ211
·FEATURES ·Static Drain-Source On-Resistance
: RDS(on) = 0.8Ω(Max) ·SOA is Power Dissipation Limited ·High input impedance ·High speed switching ·Minimum Lot-to-L |
Inchange Semiconductor |
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