BUZ11S2 डाटा शीट PDF( Datasheet )

BUZ 11 S2 Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 11 S2 VDS 60 V ID 30 A RDS(on) 0.04 Ω Package TO-220 A

BUZ11S2 BUZ11S2FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ11S2 BUZ11S2FI Voss 60 V 60 V ROS(on) 0.04 {1 0.04 {1 10 - 30 A 20 A • VERY LOW ON-LOSSES • LOW DRIVE ENERGY FOR EASY DRIVE

isc N-Channel Mosfet Transistor BUZ11S2 ·FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 0.04Ω(Max) ·SOA is Power Dissipation Limited ·High input impedance ·High speed switching ·Minimum Lot-to

BUZ11S2 BUZ11S2FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ11S2 BUZ11S2FI Voss 60 V 60 V ROS(on) 0.04 {1 0.04 {1 10 - 30 A 20 A • VERY LOW ON-LOSSES • LOW DRIVE ENERGY FOR EASY DRIVE