BUX67 डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| BUX67 | Bipolar NPN Device BUX67
Dimensions in mm (inches).
3.68 (0.145) rad. max.
6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 4.08(0.161) rad.
Bipolar NPN Device in a Hermetically sealed TO66 Metal Package.
11.94 (0.470) 12.70 (0.500)
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 Seme LAB |
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| BUX67 | NPN Transistor isc Silicon NPN Power Transistors
DESCRIPTION ·Contunuous Collector Current-IC= 2A ·Power Dissipation-PD=35W @TC= 25℃ ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 2.5V(Max)@ IC = 1A ·Minimum Lot-to |
 INCHANGE |
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| BUX67A | NPN Transistor isc Silicon NPN Power Transistors
DESCRIPTION ·Contunuous Collector Current-IC= 2A ·Power Dissipation-PD=35W @TC= 25℃ ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 2.5V(Max)@ IC = 1A ·Minimum Lot-to |
INCHANGE |
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| BUX67B | NPN Transistor isc Silicon NPN Power Transistors
DESCRIPTION ·Contunuous Collector Current-IC= 2A ·Power Dissipation-PD=35W @TC= 25℃ ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 2.5V(Max)@ IC = 1A ·Minimum Lot-to |
INCHANGE |
|
| BUX67C | NPN Transistor isc Silicon NPN Power Transistors
DESCRIPTION ·Contunuous Collector Current-IC= 2A ·Power Dissipation-PD=35W @TC= 25℃ ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 2.5V(Max)@ IC = 1A ·Minimum Lot-to |
INCHANGE |
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