डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BUX16 | Bipolar NPN Device BUX16
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
38.61 (1 |
Seme LAB |
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BUX16 | NPN Transistor isc Silicon NPN Power Transistors
DESCRIPTION · Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 200V(Min)- BUX16 = 250V(Min)- BUX16A = 300V(Min)- BUX16B = 350V(Min)- BUX16C
·High Power Dissipation ·Wide |
INCHANGE |
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BUX16A | NPN Transistor isc Silicon NPN Power Transistors
DESCRIPTION · Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 200V(Min)- BUX16 = 250V(Min)- BUX16A = 300V(Min)- BUX16B = 350V(Min)- BUX16C
·High Power Dissipation ·Wide |
INCHANGE |
|
BUX16B | NPN Transistor isc Silicon NPN Power Transistors
DESCRIPTION · Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 200V(Min)- BUX16 = 250V(Min)- BUX16A = 300V(Min)- BUX16B = 350V(Min)- BUX16C
·High Power Dissipation ·Wide |
INCHANGE |
|
BUX16C | NPN Transistor isc Silicon NPN Power Transistors
DESCRIPTION · Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 200V(Min)- BUX16 = 250V(Min)- BUX16A = 300V(Min)- BUX16B = 350V(Min)- BUX16C
·High Power Dissipation ·Wide |
INCHANGE |
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