BUW35 डाटा शीट PDF( Datasheet )

BUW35 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUW35 www.datasheet4u.com DESCRIPTION ·With TO-3 package ·High breakdown voltage APPLICATIONS ·For high voltage ,fast switching

isc Silicon NPN Power Transistor BUW35 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min.) ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reli