डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BUV70 | NPN Transistor isc Silicon NPN Power Transistor
BUV70
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 600V (Min) ·High Power Dissipation ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust devi |
INCHANGE |
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BUV70 | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BUV70
www.datasheet4u.com
DESCRIPTION ·With TO-3PN package ·High breakdown voltage ·Fast switching speed ·Wide area of safe op |
SavantIC |
www.DataSheet.in | 2017 | संपर्क |