BUV50 डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistor DESCRIPTION ·High Current Capability ·Low Collector Saturation Voltage- : VCE(sat)= 0.8V (Max.) @IC= 10A ·High Switching Speed ·Minimum Lot-to-Lot variations for robust dev

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUV50 www.datasheet4u.com DESCRIPTION ·With TO-3 package ·High dielectric strength ·Short switching time APPLICATIONS ·Suitabl

BUV50 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.