BUV23 डाटा शीट PDF( Datasheet )

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BUV23/D SWITCHMODE Series NPN Silicon Power Transistor . . . designed for high current, high speed, high power applications. • High DC current g

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUV23 www.datasheet4u.com DESCRIPTION ·With TO-3 package ·High DC current gain ·Very fast switching times ·Low collector satur

BUV23 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1

NPN BUV23 POWER SWITCH APPLICATIONS The BUV23 is silicon multiepitaxial mesa NPN transistors in Jedec TO-3. They are intended for use in power switching appications in military and industrial equipments. ABSO

isc Silicon NPN Power Transistor BUV23 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 0.8V (Max.) @IC= 8A ·High Switching Speed ·High DC Current Gain- : hFE= 15(Min.) @IC= 8A ·Minimum Lot-to-L