डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BUT12A | SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION) BUT12A
GENERAL DESCRIPTION
SILICON DIFFUSED POWER TRANSISTOR
Highvoltage,high-speed switching npn transistors in a metal envelope ,primarily for use in switching power circuits.
QUICK REFERENCE DATA
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Wing Shing Computer Components |
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BUT12A | Silicon diffused power transistors DISCRETE SEMICONDUCTORS
DATA SHEET
BUT12; BUT12A Silicon diffused power transistors
Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 13
Philips Semico |
NXP |
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BUT12AF | SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION) BUT12AF
GENERAL DESCRIPTION
SILICON DIFFUSED POWER TRANSISTOR
Highvoltage,high-speed switching npn transistors in a metal envelope ,primarily for use in switching power circuits.
QUICK REFERENCE DATA
SYMBOL
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Wing Shing Computer Components |
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BUT12AF | Silicon diffused power transistors DISCRETE SEMICONDUCTORS
DATA SHEET
BUT12F; BUT12AF Silicon diffused power transistors
Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 13
Philips Semi |
NXP |
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BUT12AF | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-220Fa package www.datasheet4u.com ·High voltage ,high speed APPLICATIONS ·Converters ·Inverters ·Switching |
SavantIC |
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BUT12AI | Silicon Diffused Power Transistor Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT12AI
GENERAL DESCRIPTION
Improved high-voltage, high-speed glass-passivated npn power transistor in a TO220AB envelope speci |
NXP |
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BUT12AX | NPN Transistor isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 450V(Min.) ·High Speed Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
per |
INCHANGE |
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