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BUT11AF | High Voltage NPN Power Transistor MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BUT11AF/D
Full Pak High Voltage NPN Power Transistor
For Isolated Package Applications
The BUT11AF was designed for use in line operated switching |
Motorola Inc |
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BUT11AF | Silicon Diffused Power Transistor Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT11AF
GENERAL DESCRIPTION
High-voltage, high-speed glass-passivated npn power transistor in a SOT186 envelope with electrical |
NXP |
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BUT11AF | SILICON DIFFUSED POWER TRANSISTOR BUT11AF
GENERAL DESCRIPTION
SILICON DIFFUSED POWER TRANSISTOR
Highvoltage,high-speed switching npn transistors in a metal envelope ,primarily for use in switching power circuits.
QUICK REFERENCE DATA
SYMBOL
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Wing Shing Computer Components |
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BUT11AF | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-220Fa package www.datasheet4u.com ·High voltage ,high speed APPLICATIONS ·Converters ·Inverters ·Switching |
SavantIC |
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BUT11AF | High Voltage NPN Power Transistor ON Semiconductort
FULL PAKt High Voltage NPN Power Transistor
For Isolated Package Applications
The BUT11AF was designed for use in line operated switching power supplies in a wide range of end use application |
ON Semiconductor |
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BUT11AF | NPN Silicon Transistor BUT11F/11AF
BUT11F/11AF
High Voltage Power Switching Applications
NPN Silicon Transistor
1 TO-220F 1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
V |
Fairchild Semiconductor |
www.DataSheet.in | 2017 | संपर्क |