BUT11 डाटा शीट PDF( Datasheet )

DISCRETE SEMICONDUCTORS DATA SHEET BUT11; BUT11A Silicon diffused power transistors Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 13 Philips Semico

BUT11 NPN SILICON POWER TRANSISTOR Copyright © 1997, Power Innovations Limited, UK MAY 1989 - REVISED MARCH 1997 q q q Rugged Triple-Diffused Planar Construction 100 W at 25°C Case Temperature 5 A Continuou

BUT11/11A HIGH VOLTAGE POWER SWITCHING APPLICATIONS NPN SILICON TRANSISTOR TO-220 ABSOLUTE MAXIMUM RATINGS (Ta=25°c) Characteristic Collector-Emitter Voltage:BUT11 :BUT11A Collector-Emitter Voltage:BUT11

www.DataSheet4U.com BUT11 NPN SILICON POWER TRANSISTOR ● ● ● Rugged Triple-Diffused Planar Construction 100 W at 25°C Case Temperature 5 A Continuous Collector Current B C E 1 2 3 TO-220 PACKAGE (TOP

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package www.datasheet4u.com ·High voltage ,high speed APPLICATIONS ·Converters ·Inverters ·Switching r

® BUT11A HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s STMicroelectronics PREFERRED SALESTYPE s NPN TRANSISTOR s HIGH VOLTAGE CAPABILITY s FAST SWITCHING SPEED APPLICATIONS: )s FLYBACK AND FORWARD SINGL