BUR51 डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 200V(Min) ·High Current Capability ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device p

® BUR51 HIGH CURRENT NPN SILICON TRANSISTOR s STMicroelectronics PREFERRED SALESTYPE s NPN TRANSISTOR DESCRIPTION The BUR51 is a silicon Multiepitaxial Planar NPN transistor in modified Jedec TO-3 metal case

BUR51 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.