डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BUR21 | NPN Transistor isc Silicon NPN Power Transistor
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= 1.0V (Max.) @IC= 25A ·High Switching Speed ·High DC Current Gain-
: hFE= 10(Min.) @IC= 25A ·Minimum Lot-to-Lot va |
INCHANGE |
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BUR21 | Bipolar NPN Device BUR21
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
38.61 (1 |
Seme LAB |
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