डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BUR20 | NPN Transistor isc Silicon NPN Power Transistor
DESCRIPTION ·High DC Current Gain-hFE=10(Min)@IC = 50A ·Low Saturation Voltage-
VCE(sat)= 1.0V(Max)@ IC = 25A ·Minimum Lot-to-Lot variations for robust device
performance an |
INCHANGE |
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BUR21 | NPN Transistor | INCHANGE |
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BUR24 | Bipolar NPN Device | Seme LAB |
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BUR21 | Bipolar NPN Device | Seme LAB |
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BUR22 | NPN Transistor | INCHANGE |
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BUR20 | NPN Transistor | INCHANGE |
www.DataSheet.in | 2017 | संपर्क |