BUL741 डाटा शीट PDF( Datasheet )

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUL741 DESCRIPTION ·Collector–Emitter Breakdown Voltage : V(BR)CEO = 400V(Min.) ·Collector Saturation Voltage : VCE(sat) =

BUL741 BUL741FP High voltage fast-switching NPN power transistors Features ■ High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high sw

BUL741 BUL741FP High voltage fast-switching NPN power transistors Features ■ High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high sw