BUL58 डाटा शीट PDF( Datasheet )

BUL58BSMD MECHANICAL DATA Dimensions in mm 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 3 .6 0 (0 .1 4 2 ) M a x

LAB MECHANICAL DATA Dimensions in mm 10.2 1.3 4.5 SEME BUL58A ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Designed for use in electronic ballast applications 6.3 3

LAB MECHANICAL DATA Dimensions in mm 10.2 1.3 4.5 SEME BUL58B ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Designed for use in electronic ballast applications 6.3 3

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUL58B DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 100V(Min.) ·Collector Saturation Voltage : VCE(sat)

BUL58BSMD MECHANICAL DATA Dimensions in mm 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 3 .6 0 (0 .1 4 2 ) M a x

® BUL58D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s STMicroelectronics PREFERRED SALESTYPE s NPN TRANSISTOR s HIGH VOLTAGE CAPABILITY s LOW SPREAD OF DYNAMIC PARAMETERS s MINIMUM LOT-TO-LOT SPREAD FOR

INCHANGE Semiconductor Silicon NPN Power Transistor Product Specification BUL58D DESCRIPTION ·High Voltage Capability ·High Speed Switching ·Integrated Antiparallel Collector-Emitter Diode APPLICATIONS ·