BUL56B डाटा शीट PDF( Datasheet )

LAB MECHANICAL DATA Dimensions in mm 10.2 1.3 4.5 SEME BUL56B ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Designed for use in electronic ballast applications 6.3 3

isc Silicon NPN Power Transistor BUL56B DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 100V(Min.) ·Collector Saturation Voltage : VCE(sat) = 0.2V(Max) @ IC= 1A ·High Speed Switching ·Mi

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUL56B www.datasheet4u.com DESCRIPTION ·With TO-220C package ·High voltage ·Fast switching ·High energy rating APPLICATIONS ·

BUL56BSMD MECHANICAL DATA Dimensions in mm NPN FAST SWITCHING TRANSISTOR 3 .6 0 (0 .1 4 2 ) M a x . 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1