| No. | Partie # | Fabricant | Description | Fiche Technique |
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Seme LAB |
NPN Transistor TO220 • Multi –base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. • Ion implant and high accuracy masking for tight control of characteristics from bat |
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SavantIC |
SILICON POWER TRANSISTOR saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter c |
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Seme LAB |
NPN Transistor • Multi –base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. • Ion implant and high accuracy masking for tight control of characteristics from batch to |
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