BUL52A डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 500V(Min.) ·Collector Saturation Voltage : VCE(sat) = 0.1V(Max) @ IC= 0.1A ·High Speed Switching ·Minimum

LAB MECHANICAL DATA Dimensions in mm 10.2 SEME BUL52AFI ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 3.6 Dia. 6.3 15.1 Designed for use in electronic ballast appli