BUL52 डाटा शीट PDF( Datasheet )

LAB MECHANICAL DATA Dimensions in mm 10.2 1.3 4.5 SEME BUL52B ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Designed for use in electronic ballast applications 6.3 3

isc Silicon NPN Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 500V(Min.) ·Collector Saturation Voltage : VCE(sat) = 0.1V(Max) @ IC= 0.1A ·High Speed Switching ·Minimum

LAB MECHANICAL DATA Dimensions in mm 10.2 SEME BUL52AFI ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 3.6 Dia. 6.3 15.1 Designed for use in electronic ballast appli

LAB MECHANICAL DATA Dimensions in mm 10.2 1.3 4.5 SEME BUL52B ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Designed for use in electronic ballast applications 6.3 3

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BUL52B www.datasheet4u.com DESCRIPTION ·With TO-220C package ·High voltage ·Fast switching ·High energy rating APPLICATIONS ·

LAB MECHANICAL DATA Dimensions in mm 10.2 SEME BUL52BFI ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 3.6 Dia. 6.3 15.1 Designed for use in electronic ballast appli