BUL416T डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistor INCHANGE Semiconductor BUL416T DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 800V(Min.) ·Low Collector Saturation Voltage : VCE(sat) = 1.5V(Max) @ IC= 2A

BUL416T High voltage fast-switching NPN power transistor Features ■ High voltage capability ■ Low spread of dynamic parameters ■ Very high switching speed Applications ■ Electronic ballast for fluoresc