| No. | Partie # | Fabricant | Description | Fiche Technique |
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STMicroelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR A A A W o o C C June 1998 1/6 BUL39D THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 1.78 70 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbo |
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Inchange Semiconductor |
Silicon NPN Power Transistor onductor isc Silicon NPN Power Transistor isc Product Specification BUL39D ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; L= |
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STMicroelectronics |
High voltage fast-switching NPN power transistor ■ Integrated antiparallel collector-emitter diode ■ High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Application ■ Electronic transformer for halogen lamp Descri |
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