BUK9518-55 डाटा शीट PDF( Datasheet )

Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’tre

Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’tre

TO -22 0A B BUK9518-55A N-channel TrenchMOS logic level FET Rev. 02 — 17 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Trans

isc N-Channel MOSFET Transistor BUK9518-55A ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤16mΩ ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot va