डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BUK9230-55A | TrenchMOS FET BUK9230-55A
TrenchMOS™ logic level FET
Rev. 03 — 30 January 2001
M3D300
www.DataSheet4U.com
Product specification
1. Description
N-channel enhancement mode field-effect power transistor in a plastic pa |
NXP Semiconductors |
|
BUK9230-55A | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
BUK9230-55A
FEATURES ·Drain Current : ID= 88A@ TC=25℃ ·Drain Source Voltage
: VDSS= 55V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 27mΩ(Max) ·100% avalanche tes |
Inchange Semiconductor |
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