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BUK444-800A | PowerMOS transistor Philips Semiconductors
Product Specification
PowerMOS transistor
BUK444-800A/B
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is int |
NXP |
|
BUK444-800A | N-Channel MOSFET isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Source Voltage-
: VDSS=800V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS · |
INCHANGE |
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