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BUJ302 | Silicon Diffused Power Transistor Philips Semiconductors
Objective specification
Silicon Diffused Power Transistor
BUJ302A
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope int |
NXP |
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BUJ302A | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUJ302A
DESCRIPTION ·High Voltage ·High Speed Switching
APPLICATIONS ·Desined for use in high frequency electronic lightin |
Inchange Semiconductor |
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BUJ302A | Silicon Diffused Power Transistor TO-220AB
BUJ302A
NPN power transistor
Rev. 02 — 28 March 2011
Product data sheet
1. Product profile
1.1 General description
High-voltage, high-speed planar-passivated NPN power switching transistor in a S |
NXP |
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BUJ302AD | NPN power transistor DPAK
BUJ302AD
NPN power transistor
Rev. 01 — 28 March 2011
Product data sheet
1. Product profile
1.1 General description
High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT4 |
NXP |
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BUJ302AX | Silicon Diffused Power Transistor TO-220F
BUJ302AX
NPN power transistor
Rev. 02 — 28 March 2011
Product data sheet
1. Product profile
1.1 General description
High-voltage, high-speed planar-passivated NPN power switching transistor in a S |
NXP |
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