BU941ZP डाटा शीट PDF( Datasheet )

BU941ZP BU941ZPFI High voltage ignition coil driver NPN power Darlington transistors Features ■ Very rugged bipolar technology ■ Built in clamping Zener ■ High operating junction temperature ■ Fully in

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Built In Clamping Zener ·High Operating Junction Temperature ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPL

CYStech Electronics Corp. NPN Epitaxial Planar Transistor BU941ZP3 BVCEO IC VCESAT(MAX) Spec. No. : C660P3 Issued Date : 2008.07.22 Revised Date :2011.01.04 Page No. : 1/5 350V 15A 2V @12A Features •High

BU941ZP BU941ZPFI High voltage ignition coil driver NPN power Darlington transistors Features ■ Very rugged bipolar technology ■ Built in clamping Zener ■ High operating junction temperature ■ Fully in

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU941ZPFI www.datasheet4u.com DESCRIPTION ·With TO-3PML package ·DARLINGTON ·High breakdown voltage APPLICATIONS ·High ruggedn

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 350V(Min.) ·High Reliability ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for