BU941Z डाटा शीट PDF( Datasheet )

® BU941Z/BU941ZP BU941ZPFI HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON s s s s VERY RUGGED BIPOLAR TECHNOLOGY BUILT IN CLAMPING ZENER HIGH OPERATING JUNCTION TEMPERATURE WIDE RANGE OF PACKAGES

UNISONIC TECHNOLOGIES CO., LTD BU941Z NPN SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER 1 TO-3P  FEATURES * NPN Darlington * Integrated antiparallel collector-emitter diode

CYStech Electronics Corp. Spec. No. : C660E3 Issued Date : 2010.02.03 Revised Date : Page No. : 1/5 NPN Epitaxial Planar Transistor BU941ZE3 BVCEO IC RCESAT(MAX) 350V 15A 0.18Ω Features •High BVCEO •L

CYStech Electronics Corp. NPN Epitaxial Planar Transistor BU941ZF3 Spec. No. : C660F3 Issued Date : 2010.10.01 Revised Date : 2015.09.04 Page No. : 1/6 Features •High BVCEO •Low VCE(SAT) •High current c

CYStech Electronics Corp. NPN Epitaxial Planar Transistor BU941ZFP Spec. No. : C660FP Issued Date : 2008.05.20 Revised Date : Page No. : 1/5 Features •High BVCEO •Low VCE(SAT) •High current capability

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Built In Clamping Zener ·High Operating Junction Temperature ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPL

CYStech Electronics Corp. Spec. No. : C660E3 Issued Date : 2014.01.09 Revised Date : Page No. : 1/6 NPN Epitaxial Planar Transistor BU941ZLE3 BVCEO IC VCESAT(MAX) 350V 15A 1.6V Features •High BVCEO •Lo