BU911 डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistor BU911 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICAT

www.DataSheet4U.com BU911 MEDIUM VOLTAGE NPN IGNITION DARLINGTON s s s s SGS-THOMSON PREFERRED SALESTYPE NPN DARLINGTON LOW BASE-DRIVE REQUIREMENTS INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATION

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU911 www.datasheet4u.com DESCRIPTION ·With TO-220C package ·DARLINGTON APPLICATIONS ·Solenoid and relay drivers ·Motor contro

    NPN BU911 HIGH VOLTAGE POWER DARLINGTON The BU911 are high voltage, silicon NPN transistors in monolithic Darlington mounted in Jedec TO-220 plastic package. They are designed for applications such as el