डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
BU800 | NPN Transistor isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 5.0V(Max.)@ IC= 5.0A ·Built-in Damper Diode ·Wide area of safe o |
INCHANGE |
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BU808DFI | HIGH VOLTAGE FAST-SWITCHING NPN TRANSISTOR | ST Microelectronics |
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BU808DFX | HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON TRANSISTOR | STMicroelectronics |
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BU808DFH | HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON TRANSISTOR | STMicroelectronics |
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BU808 | NPN Transistor | ST Microelectronics |
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BU801 | High Voltage Fast Darlington | ST Microelectronics |
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BU808DFX-LF | HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON TRANSISTOR | Sunspirit |
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BU807 | MEDIUM VOLTAGE NPN TRANSISTORS | ST Microelectronics |
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BU806 | MEDIUM VOLTAGE NPN TRANSISTORS | ST Microelectronics |
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BU806 | 8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS | Motorola Inc |
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BU806 | MEDIUM Voltage & Fast Switching Darlington Transistor | TGS |
www.DataSheet.in | 2017 | संपर्क |