BU608 डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistor BU608 DESCRIPTION ·High Voltage: VCEV= 400V(Min) ·Fast Switching Speed- : tf= 0.5μs(Max) ·Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 6A ·Minimum Lot-to-Lot variat

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU608 www.datasheet4u.com DESCRIPTION ·With TO-3 package ·High voltage ·Wide area of safe operation APPLICATIONS ·For TV horiz

R www.jdsemi.cn 深圳市晶导电子有限公司 ShenZhen Jingdao Electronic Co.,Ltd. BU6084B Bipolar Junction Transistor ◆Si NPN ◆RoHS COMPLIANT 1．APPLICATION Computer aided power and Switch-mode po

R www.jdsemi.cn 深圳市晶导电子有限公司 ShenZhen Jingdao Electronic Co.,Ltd. BU6084BF Bipolar Junction Transistor ◆Si NPN ◆RoHS COMPLIANT 1．APPLICATION Computer aided power and Switch-mode p

isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage: VCEV= 400V(Min) ·Fast Switching Speed- : tf= 0.5μs(Max) ·Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 6A ·Minimum Lot-to-Lot variations fo